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1. product pro?le 1.1 general description npn resistor-equipped transistors. [1] also available in sot54a and sot54 variant packages (see section 2 ). 1.2 features 1.3 applications 1.4 quick reference data pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w rev. 03 15 february 2005 product data sheet table 1: product overview type number package pnp complement philips jeita pdtc144ve sot416 sc-75 pdta144ve pdtc144vk sot346 sc-59a pdta144vk pdtc144vm sot883 sc-101 pdta144vm pdtc144vs [1] sot54 (to-92) sc-43a pdta144vs pdtc144vt sot23 - pdta144vt pdtc144vu sot323 sc-70 pdta144vu n built-in bias resistors n reduces component count n simpli?es circuit design n reduces pick and place costs n general-purpose switching and ampli?cation n circuit drivers n inverter and interface circuits table 2: quick reference data symbol parameter conditions min typ max unit v ceo collector-emitter voltage open base - - 50 v i o output current (dc) - - 100 ma r1 bias resistor 1 (input) 33 47 61 k w r2/r1 bias resistor ratio 0.17 0.21 0.26
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 2 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 2. pinning information table 3: pinning pin description simpli?ed outline symbol sot54 1 input (base) 2 output (collector) 3 gnd (emitter) sot54a 1 input (base) 2 output (collector) 3 gnd (emitter) sot54 variant 1 input (base) 2 output (collector) 3 gnd (emitter) sot23, sot323, sot346, sot416 1 input (base) 2 gnd (emitter) 3 output (collector) sot883 1 input (base) 2 gnd (emitter) 3 output (collector) 001aab347 1 2 3 006aaa145 r1 r2 2 3 1 001aab348 1 2 3 006aaa145 r1 r2 2 3 1 001aab447 1 2 3 006aaa145 r1 r2 2 3 1 006aaa144 12 3 sym007 3 2 1 r1 r2 sym007 3 2 1 r1 r2
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 3 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 3. ordering information [1] also available in sot54a and sot54 variant packages (see section 2 and section 9 ). 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china table 4: ordering information type number package name description version pdtc144ve sc-75 plastic surface mounted package; 3 leads sot416 pdtc144vk sc-59a plastic surface mounted package; 3 leads sot346 pdtc144vm sc-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm sot883 pdtc144vs [1] sc-43a plastic single-ended leaded (through hole) package; 3 leads sot54 pdtc144vt - plastic surface mounted package; 3 leads sot23 pdtc144vu sc-70 plastic surface mounted package; 3 leads sot323 table 5: marking codes type number marking code [1] pdtc144ve 18 pdtc144vk 29 pdtc144vm g6 pdtc144vs tc144v pdtc144vt *aa pdtc144vu *18
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 4 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 5. limiting values [1] refer to standard mounting conditions. [2] re?ow soldering is the only recommended soldering method. [3] refer to sot883 standard mounting conditions; fr4 printed-circuit board with 60 m m copper strip line. 6. thermal characteristics [1] refer to standard mounting conditions. [2] re?ow soldering is the only recommended soldering method. [3] refer to sot883 standard mounting conditions; fr4 printed-circuit board with 60 m m copper strip line. table 6: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 15 v v i input voltage positive - +40 v negative - - 15 v i o output current (dc) - 100 ma i cm peak collector current - 100 ma p tot total power dissipation sot416 t amb 25 c [1] - 150 mw sot346 t amb 25 c [1] - 250 mw sot883 t amb 25 c [2] [3] - 250 mw sot54 t amb 25 c [1] - 500 mw sot23 t amb 25 c [1] - 250 mw sot323 t amb 25 c [1] - 200 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb ambient temperature - 65 +150 c table 7: thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air sot416 [1] - - 833 k/w sot346 [1] - - 500 k/w sot883 [2] [3] - - 500 k/w sot54 [1] - - 250 k/w sot23 [1] - - 500 k/w sot323 [1] - - 625 k/w
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 5 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 7. characteristics table 8: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a --1 m a v ce =30v; i b =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 150 m a h fe dc current gain v ce =5v; i c = 5 ma 40 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 150 mv v i(off) off-state input voltage v ce =5v; i c = 100 m a - 3.1 1 v v i(on) on-state input voltage v ce = 300 mv; i c =2ma 6 3.8 - v r1 bias resistor 1 (input) 33 47 61 k w r2/r1 bias resistor ratio 0.17 0.21 0.26 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz --2pf
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 6 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w v ce = 5 v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = - 40 c i c /i b = 20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = - 40 c fig 1. dc current gain as a function of collector current; typical values fig 2. collector-emitter saturation voltage as a function of collector current; typical values v ce = 0.3 v (1) t amb = - 40 c (2) t amb = 25 c (3) t amb = 100 c v ce = 5 v (1) t amb = - 40 c (2) t amb = 25 c (3) t amb = 100 c fig 3. on-state input voltage as a function of collector current; typical values fig 4. off-state input voltage as a function of collector current; typical values i c (ma) 10 - 1 10 2 10 1 006aaa099 10 2 10 10 3 h fe 1 (1) (2) (3) i c (ma) 110 2 10 006aaa100 10 - 1 1 v cesat (v) 10 - 2 (1) (3) (2) 006aaa101 i c (ma) 10 - 1 10 2 10 1 10 v i(on) (v) 1 (1) (2) (3) 006aaa102 i c (ma) 10 - 1 10 1 10 v i(off) (v) 1 (1) (2) (3)
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 7 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 8. package outline fig 5. package outline sot416 (sc-75) fig 6. package outline sot346 (sc-59a/to-236) fig 7. package outline sot883 (sc-101) fig 8. package outline sot54 (sc-43a/to-92) fig 9. package outline sot54a fig 10. package outline sot54 variant 04-11-04 dimensions in mm 0.95 0.60 1.8 1.4 1.75 1.45 0.9 0.7 0.25 0.10 1 0.30 0.15 12 3 0.45 0.15 04-11-11 dimensions in mm 3.0 2.5 1.7 1.3 0.26 0.10 12 3 1.9 0.50 0.35 1.3 1.0 3.1 2.7 0.6 0.2 03-04-03 dimensions in mm 0.62 0.55 0.55 0.47 0.50 0.46 0.65 0.20 0.12 3 21 0.30 0.22 0.30 0.22 1.02 0.95 0.35 04-11-16 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 2.54 3 2 1 04-06-28 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 2.54 5.08 3 max 3 2 1 05-01-10 dimensions in mm 5.2 5.0 14.5 12.7 4.8 4.4 4.2 3.6 0.45 0.38 0.48 0.40 1.27 1.27 2.54 2.5 max 3 2 1
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 8 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 9. packing information [1] for further information and the availability of packing methods, see section 14 . fig 11. package outline sot23 (to-236ab) fig 12. package outline sot323 (sc-70) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 04-11-04 dimensions in mm 0.45 0.15 1.1 0.8 2.2 1.8 2.2 2.0 1.35 1.15 1.3 0.4 0.3 0.25 0.10 12 3 table 9: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 5000 10000 pdtc144ve sot416 4 mm pitch, 8 mm tape and reel -115 - -135 pdtc144vk sot346 4 mm pitch, 8 mm tape and reel -115 - -135 pdtc144vm sot883 2 mm pitch, 8 mm tape and reel - - -315 pdtc144vs sot54 bulk, straight leads - -412 - sot54a tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 sot54 variant bulk, delta pinning - -112 - pdtc144vt sot23 4 mm pitch, 8 mm tape and reel -215 - -235 pdtc144vu sot323 4 mm pitch, 8 mm tape and reel -115 - -135
9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 9 of 11 philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 10. revision history table 10: revision history document id release date data sheet status change notice doc. number supersedes pdtc144v_ser_3 20050215 product data sheet - 9397 750 14016 pdtc144vt_2 modi?cations: ? the types pdtc144ve, pdtc144vk, pdtc144vm, pdtc144vs and pdtc144vu were added. ? t ab le 1 product o v er vie w added ? t ab le 8 v i(on) rede?ned to v i(on) on-state input voltage ? t ab le 8 v i(off) rede?ned to v i(off) off-state input voltage ? figure 1 , 2 , 3 and 4 added ? section 9 p ac king inf or mation added pdtc144vt_2 20040511 objective data sheet - 9397 750 13207 pdtc144vt_1 pdtc144vt_1 20040305 objective data sheet - 9397 750 12556 -
philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 9397 750 14016 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 03 15 february 2005 10 of 11 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 15 february 2005 document number: 9397 750 14016 published in the netherlands philips semiconductors pdtc144v series npn resistor-equipped transistors; r1 = 47 k w , r2=10k w 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 packing information. . . . . . . . . . . . . . . . . . . . . . 8 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 14 contact information . . . . . . . . . . . . . . . . . . . . 10

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